document number: 94410 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 1 phase control thyristors (hockey puk version), 960 a st380cpbf series vishay high power products features ? center amplifying gate ? metal case with ceramic insulator ? international standard case to-200ab (e-puk) ? low profile hockey puk to increase current-carryi ng capability ? lead (pb)-free ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 960 a to-200ab (e-puk) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 960 a t hs 55 c i t(rms) 1900 a t hs 25 c i tsm 50 hz 15 000 a 60 hz 15 700 i 2 t 50 hz 1130 ka 2 s 60 hz 1030 v drm /v rrm 400/600 v t q typical 100 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st380c..c 04 400 500 50 06 600 700
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94410 2 revision: 11-aug-08 st380cpbf series vishay high power products phase control thyristors (hockey puk version), 960 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (single side) cooled 960 (440) a 55 (75) c maximum rms on-state current i t(rms) dc at 25 c heatsink temperature double side cooled 1900 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 15 000 t = 8.3 ms 15 700 t = 10 ms 100 % v rrm reapplied 12 600 t = 8.3 ms 13 200 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1130 ka 2 s t = 8.3 ms 1030 t = 10 ms 100 % v rrm reapplied 800 t = 8.3 ms 725 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 11 300 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.85 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 0.88 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.25 m high level value of on-s tate slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.24 maximum on-state voltage v tm i pk = 3000 a, t j = t j maximum, t p = 10 ms sine pulse 1.60 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 550 a, t j = t j maximum, di/dt = 40 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm, i drm t j = t j maximum, rated v drm /v rrm applied 50 ma
document number: 94410 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 3 st380cpbf series phase control thyristors (hockey puk version), 960 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm t j = t j maximum, t p 5 ms 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 200 - ma t j = 25 c 100 200 t j = 125 c 50 - dc gate voltage required to trigger v gt t j = - 40 c 2.5 - v t j = 25 c 1.8 3.0 t j = 125 c 1.1 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to heatsink r thj-hs dc operation single side cooled 0.09 k/w dc operation double side cooled 0.04 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.02 dc operation double side cooled 0.01 mounting force, 10 % 9800 (1000) n (kg) approximate weight 83 g case style see dimensions - link at the end of datasheet to-200ab (e-puk) r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.010 0.011 0.007 0.007 t j = t j maximum k/w 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.037
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94410 4 revision: 11-aug-08 st380cpbf series vishay high power products phase control thyristors (hockey puk version), 960 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st3 8 0 c . . c se r i e s (single side cooled) r (dc) = 0.09 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st380c..c se rie s (single side cooled) r (dc) = 0.09 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st3 8 0 c . . c se r i e s (double side cooled) r (dc) = 0.04 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 400 800 1200 1600 2000 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st3 8 0 c . . c se r i e s (double side cooled) r (dc) = 0.04 k/ w thj-hs 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) st3 8 0 c . . c se r i e s t = 1 2 5 c j 0 400 800 1200 1600 2000 2400 2800 0 400 800 1200 1600 2000 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st380c..c se rie s t = 1 2 5 c j
document number: 94410 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 5 st380cpbf series phase control thyristors (hockey puk version), 960 a vishay high power products fig. 7 - maximum non- repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics 6000 7000 8000 9000 10000 11000 12000 13000 14000 110100 numb er of eq ua l amp litud e half cycle current pulses (n) peak ha lf sine wave on-st ate current (a) initial t = 125c @ 6 0 hz 0 . 0 0 8 3 s @ 50 hz 0.0100 s j st380c..c series at any rated load condition and with rated v applied following surge. rrm 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 0.01 0.1 1 pu lse tra in du ra t io n ( s) maximum non repetitive surge current versus pulse train duration. control of conduc tion may not be maintained. pe a k ha l f si n e wa v e o n - st a t e c u rr e n t ( a ) initia l t = 125c no volt a g e re a p p lied ra t e d v re a p p l i e d rrm j st3 8 0 c . . c se r i e s 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st3 8 0 c . . c se r i e s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thj-hs st3 8 0 c . . c se r i e s st e a d y st a t e v a l u e r = 0.09 k/ w (single side cooled) r = 0.04 k/ w (double side cooled) (dc operation) thj-hs thj-hs transient thermal impedance z (k/ w)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94410 6 revision: 11-aug-08 st380cpbf series vishay high power products phase control thyristors (hockey puk version), 960 a fig. 11 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) t j=25 c tj = 1 2 5 c tj = - 4 0 c (2) (3) instantaneous gate current (a) in st a n t a n e o u s g a t e v o lt a g e ( v ) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms frequency limited by pg(av) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms rectangular gate pulse de vic e : st380c..c serie s (4) 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - c = puk case to-200ab (e-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 9 - lead (pb)-free 8 - critical dv/dt: none = 500 v/s (standard selection) l = 1000 v/s (special selection) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) device code 5 1 3 24 6789 st 38 0 c 06 c 1 - pbf links to related documents dimensions http://www.vishay.com/doc?95075
document number: 95075 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-200ab (e-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) min. 0.3 (0.01) min. 25.3 (0.99) dia. max. 14.1/15.1 (0.56/0.59) 25 5 25.3 (0.99) dia. max. 40.5 (1.59) dia. max. 42 (1.65) max. anode to gate creepage distance: 11.18 (0.44) minimum strike distance: 7.62 (0.30) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) gate terminal for 1.47 (0.06) dia. pin receptacle 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
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